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sf6 o2 toshiba

US5354417A - Etching MoSi2 using SF6, HBr and O2 - Google Patents Etching MoSi2 using SF6, HBr and O2 Download PDF Info Publication number US5354417A. US5354417A ...

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  • SF6 Gas Transformers | Transmission Distribution - Toshiba

    Toshiba GITs are insulated with SF 6 gas rather than traditionally hazardous oil which risks fire, explosions, and contaminating leaks. Additional advantages include reduced footprint and minimal long-term maintenance requirements. Toshiba has installed a base of more than 1400 units since delivering the first GIT in 1967.

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  • Home | Toshiba International Corporation

    Welcome to Toshiba International CorporationDownload Site! Register to view our materials and keep informed with our latest updates. You may enter your filters below to locate manuals, brochures, software, drawings, and other important documents. Select a category, choose a Product Family, then select from the list of available documents.

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  • Toshiba | Consumer Product Support | Televisions

    Toshiba Visual Solutions Corporation Toshiba Visual Solutions Corporation and its subsidiaries ceased to be the subsidiaries of Toshiba Group on February 28, 2018. they will continue to develop, sell, and offer repair and support services for Toshiba and REGZA-brand visual products.

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  • Drivers Manuals | Customer Support Toshiba Business Solutions

    Find and download Toshiba drivers and manuals for your Toshiba MFPs, thermal barcode and label printers and more.

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  • Transmission Distribution | TOSHIBA ENERGY SYSTEMS

    Toshiba Energy Systems Solutions Corporation. PRESS RELEASE 9 Feb, 2021 Investing in the Taiwan PV Plant Fund ; INFORMATION 18 Jan, 2021 Toshiba to Release Video of Hamakawasaki Operations

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  • File Download : Transmission Distribution | TOSHIBA ENERGY

    Toshiba Energy Systems Solutions Corporation This page uses JavaScript. If your browser does not support JavaScript, or you are unable to activate it, it is impossible to use this function.

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  • Where to Buy Service | Toshiba International Corporation

    Toshiba International Corporation (TIC) is Toshibapremiere manufacturing base in North America. Products include electric motors and motor controls, adjustable speed drives, power electronics, transmission and distribution systems, and more.

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  • PRODUCTS AND SOLUTIONS CATALOG

    Through the equipment for the SF6 Gas Insulated Substation (GIS), Toshiba offers the solution for power supply in small spaces such as industries, hospitals, shopping malls and other diverse applications.

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  • Solutions that realize next-generation transmission

    Toshiba designs, develops and maintains smart meter communications systems to which the worldlargest wireless multi-hop network is applied. The system shown below consists of communication units for smart meters, concentrators for relaying data, and head-end systems to gather and retain data.

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  • Toshiba to Demonstrate Leading Tamp;D Solutions at CIGRE

    Aug 24, 2018 · Toshiba ESS will be demonstrating an environmentally-friendly breaker under development, which uses carbon dioxide-based natural gases as an insulator instead of SF6. 3.

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  • Product Support - Toshiba Storage

    P300 Packaging Mislabel Notice The support for Pogoplug® product services with Toshiba hard drives will terminate as of September 30, 2017 and new user registrations were disabled as of June 1, 2017.

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  • Power Apparatus Components | Motors Drives | Toshiba

    Toshiba International Corporation (TIC) is Toshibapremiere manufacturing base in North America. Products include electric motors and motor controls, adjustable speed drives, power electronics, transmission and distribution systems, and more.

    Get Price
  • US5354417A - Etching MoSi2 using SF6, HBr and O2 - Google Patents

    US5354417A - Etching MoSi2 using SF6, HBr and O2 - Google Patents Etching MoSi2 using SF6, HBr and O2 Download PDF Info Publication number US5354417A. US5354417A

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  • Effect of substrate temperature on sidewall erosion in high

    Aug 06, 2018 · A Si deep-trench etching process using HBr/SF 6 /O 2 plasma was studied. It was found that when the hole trench width was decreased from 190 to 140 nm, erosions at the topmost part of the Si hole sidewall were observed at an incidence of 10 ppm, which was checked from top-down views of 928 million hole shapes per wafer.

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  • Takanori Iijimaresearch works | Toshiba Corporation, Tokyo

    Takanori Iijima6 research works with 54 citations and 198 reads, including: Hybrid Thermofluid Simulation with Chemically Non-Equilibrium and Equilibrium Calculations for Decaying SF 6 Arcs

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  • US7922921B2 - Method for fabricating liquid crystal display

    The present invention includes the steps of providing a substrate having a main surface; depositing a dual-metal layer such as Mo/AlNd, MoW/AlNd, MoW/Al onto the main surface of the substrate; defining gate and word line patter using a layer of photoresist; and using the photoresist as an etching mask, a first metal dry etching process is carried out to etch the dual-metal layer at an etching

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  • Toshiba Consumer Storage

    Applications. School, office or PC system files. Whether for work, school or entertainment, you depend on data to keep your day rolling, and make your world more enjoyable. So be sure to safeguard that data against mishaps or mistakes. Toshiba makes it easy with a choice of spacious storage solutions for your desk, or your life on the move.

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  • 2nd International Conference on SF6 and the Environment

    Japan: SF6 Emission Reduction From Gas Insulated Equipment, Hiroshi Yasutake, Federal of Electric Power Companies and Masanari Meguro, Toshiba Corporation Norway: Voluntary Agreements with Electric Utilities, Thor Endre, ABB

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  • A review on SF6 substitute gases and research status of CF3I

    Nov 01, 2018 · 1.2.Greenhouse effect of SF 6. SF 6 gas is considered as one of the most harmful kinds of atmospheric greenhouse gases (Xiaoxing et al., 2013b).Its global warming potential (GWP) is 23,900 times higher than that of CO 2, and the life span of this gas is 3400 years in the atmosphere (Xiaoxing et al., 2013b).

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  • e-Manufacturing Design Collaboration Symposium 2019

    Toshiba EDS: 16:20: Real-time Etch Control to Reduce First Wafer Effect in SF6/O2/Ar Plasma Sangwon Ryu Seoul National University: 17:20: Adjour:

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  • Toshiba Sugar RT-SF5 Restoration - YouTube

    Toshiba Sugar RT-SF5 RestorationHope u enjoy it and Don't forget share with your friends!-----Follow me on other platforms:Fan page: goo.gl/bjtt...

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  • LQJ +%U 6) 2 SODVPD 2

    2Toshiba Memory Corporation, Yokkaichi, Mie 512-8550, Japan *E-mail: [email protected] Received June 1, 2018; accepted June 18, 2018; published online August 6, 2018 A Si deep-trench etching process using HBr/SF6/O2 plasma was studied. It was found that when the hole trench width was decreased from 190 to

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  • US4473436A - Method of producing structures from double

    The invention provides a method of producing structures from double layers composed of a metal silicide (4) and polysilicon (3) on a silicon substrate (1) containing integrated semiconductor circuits in an operational plate reactor by reactive ion etching and with the use of a photosensitive resist mask (5) on the double layer to define desired structures.

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  • Toshiba Computer Satellite Parts and Accessories

    Toshiba Computer Satellite from Encompass parts accessories. Model Number Model Results: activate to sort column ascending or descending Description Description: activate to sort column ascending or descending

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  • SF6-alternative gases for application in gas-insulated

    The most promising gas in HV switchgear applications for replacing SF6 is CO2, which is used in mixtures with low-additive concentrations of, e.g., O2, Perfluoroketones (PFK) or Perfluoronitriles

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  • Contact Toshiba Support

    Contact Toshiba Support . We’re here to help. Contact us at anytime with your storage device questions, feedback or concerns.

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  • Black White MFP Small/Med. Workgroup - Toshiba Business

    You can’t stop progress. In fact, Toshiba is dedicated to finding better ways to hurry it along. Take, for instance, our new e-STUDIO356/456 Series for workgroups. We’ve managed to raise the bar with this series. It’s proof that progress sometimes comes in small packages. Screen with large, easy-to-read control buttons and an optional

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  • US4214946A - Selective reactive ion etching of polysilicon

    Disclosed is an improved Reactive Ion Etch (RIE) technique for etching polysilicon or single crystal silicon as must be done in Very Large Scale Integration (VLSI) using silicon technology.

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  • Support | Toshiba Television

    Contact Toshiba Customer Support Center (855)527-2411 From the United States and Canada

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