News Center
sf6 o2 GE

sf6 o2 GE

Nov 29, 2013 · 2 SF4(g) + O2(g) → 2 OSF4(g) 3 0. Still have questions? Get your answers by asking now. Ask Question + 100. Join Yahoo Answers and get 100 points today. Join ...

[email protected]
News Detail
  • Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

    Mar 31, 2014 · The impact of the O 2 content in SF 6 -O 2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been studied. The characteristics of etch rate and sidewall profile are greatly affected by the O 2 content.

    Get Price
  • Precision plasma etching of Si, Ge, and Ge:P by SF6 with

    The impact of the O2 content in SF6-O2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been studied. The characteristics of etch rate and sidewall profile are greatly affected by the O2 content.

    Get Price
  • Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

    adshelp[at]cfa.harvard.edu The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86A

    Get Price
  • Green Gas for Grid - g3 - SF6 Free Solutions

    SF 6 SF6 (or Sulphur Hexafluoride) had been the standard gas used inside high voltage electrical equipment as an insulating and arc-quenching medium. However, SF 6 SF6 is also listed as an extremely potent greenhouse gas according to the Kyoto protocol, with 23,500 times the comparative Global Warming Potential of CO 2 and a lifetime of 3,200 years in the atmosphere.

    Get Price
  • Silicon Nanostructuring Using SF6/O2 Downstram Plasma Etching

    SF 6 /O 2 plasma mixture, providing the highly reactive etchant fluorine atoms, is widely used for silicon surface nanostructuring, 9 - 14 where the resulted Si nanostructures exhibited remarkable enhanced anti-reflective surface and light trapping efficiency, which is of great importance for photovoltaic applications to enhance the light absorption in Si solar cells. 10, 11, 13

    Get Price
  • Padmount Style SF Insulated Switching Solutions

    Schweitzer and GE, to match the right control for the job. For automatic power restoration, GW’s Lazer solution provides a pre-engineered, field proven system which can be pre-assembled and factory tested prior to shipment. Metalclad Switchgear Replacement —

    Get Price
  • Byproducts of Sulfur Hexafluoride (SF6) Use in the Electric

    Byproducts of Sulfur Hexafluoride (SF 6) Use in the Electric Power Industry Prepared for U.S. Environmental Protection Agency Office of Air and Radiation

    Get Price
  • Surface Reactivity of Silicon and Germanium in CF4 -O2

    The effect of reactive ion etching (RIE) of Silicon (Si), Germanium (Ge) and highly phosphorous doped Germanium (Ge:P) in an SF6-O-2 plasma has been studied.

    Get Price
  • EU Report Highlights Sulphur Hexafluoride Countdown

    In HV, a 170kV gas insulated switchgear (GIS) based Novec 5110 mixture with CO2 and O2 was the first SF6 alternative installed in a HV GIS, located in Zurich in 2015.

    Get Price
  • can someone help me balance this equation? | Yahoo Answers

    Nov 29, 2013 · 2 SF4(g) + O2(g) → 2 OSF4(g) 3 0. Still have questions? Get your answers by asking now. Ask Question + 100. Join Yahoo Answers and get 100 points today. Join

    Get Price
  • GE Expands SF6-free High-Voltage Product Portfolio to Help

    Sep 26, 2019 · GE is expanding its SF6-free portfolio to include all key high-voltage levels by 2025 GE’s Green Gas for Grid (g3) high-voltage products reduce global warming potential (GWP) by more than 99%, while offering proven technical performance Since 2017, installation of more than 386,000 tons of CO2 equivalent have been avoided on the grid as a result of GE’s g3 high-voltage products Paris

    Get Price
  • SF6 Free HV GIS and Breakers - US EPA

    Why SF6 Free GIS and breakers? Because alternatives are available 6 ABB, GE, Hitachi and Siemens have alternatives to SF6 Year non-SF6 Live Tank Breakers will be available Year non-SF6 Dead Tank Breakers will be available Year non-SF6 GIS Will be available 70kV Available 2015 Available 2016 Available 2016 115kV Available 2017 Available 2017

    Get Price
  • Chemistry problem!!!!!!!!!!!!!!!!? | Yahoo Answers

    Apr 06, 2010 · 2NO2(g) -- 2NO(g) + O2(g) (endothermic) High Temperature. I just had this question in Mastering Chem, and they say that is the right answer. 50 1. Wiley. 1 decade ago.

    Get Price
  • XPS study on dry etching of Si/Ge x Si 1−x - ScienceDirect

    Feb 01, 1995 · Abstract Reactive ion etching characteristics of epitaxial Ge 0.25 Si 0.75 in SF 6 /O 2 /He plasma has been investigated by X-ray photoelectron spectroscopy. Compositional information like Ge/Si and O/F ratios in the reaction layers on both horizontal and sidewall areas have been determined.

    Get Price
  • Deep reactive ion etching of in situ boron doped LPCVD Ge0

    Oct 01, 2013 · This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chemical vapor deposited Ge 0.7 Si 0.3 alloy in SF 6 and O 2 plasma. The effect of RF power, SF 6 flow, O 2 flow and temperature on the etch rate of Ge 0.7 Si 0.3 films with a boron concentration of 2.1 × 10 21 atoms/cm 3 is investigated.

    Get Price
  • Cornell NanoScale Facility Dry Etch Capabilities

    SF6(1.5sccm) to an O2/Ar (50/5sccm) leads to smooth etch morphology. • SF6 assists in the preferential etching of amorphous carbon at intergrain boundaries. • Aluminum used as an etch mask. • Etch rates of 270nm/min with selectivity to Al of 40:1 with etch parameters of 2800W/50W at 5mTorr.

    Get Price
  • Myth About SF6 Gas In Electrical Equipment

    May 25, 2020 · This is just the UK, SF6 stays in the atmosphere for a minimum 1000 years where as CO2 100 years. SF6 is on the increase the US expect a 6.2% increase over the next 6 years. SF6 might not damage the Ozone but it will accelerate Global Warming given the fact that it stays in the atmosphere longer can cause more damage over a longer period of time.

    Get Price
  • NNCI Site Tool Type Gases Application Wafer size SF6, C4F8

    Deep silicon etch: 100mm Versaline ICP; Deep Ge etch DSEIII SOI; Cornell Unaxis 770 ICP; SF6, C4F8, O2, Ar Deep silicon etch; 100mm Mixed silicon etch 150mm

    Get Price
  • Emission and Electrical Measurements to Assess Actinometry in

    In SiC etching plasma devices, we have recorded plasma emission from Ar, F and O atoms in SF6/Ar/O2 RF discharges as a function of pressure, input power and mixture fraction. At fixed power, the emission intensities rise nearly linearly with increasing pressure between 100 and 300 mTorr; with pressure increases to 600 mTorr, the emission intensity rolls off due to the increase in collisional

    Get Price
  • News Room : GE Grid Solutions

    The key difference between g3 and SF6 is that g3 is a gas mixture while SF6 is a single gas. Elodie Laruelle, GE Grid Solutions Eco-design Engineer, explains: “ The critical point for a gas mixture is to maintain the homogeneity of the two components (NovecTM and CO2) throughout the filling process.

    Get Price
  • SF6 Lewis Structure: How to Draw the Lewis Structure for SF6

    A step-by-step explanation of how to draw the SF6 Lewis Structure (Sulfur Hexafluoride) For the SF6 structure use the periodic table to find the total nu...

    Get Price
  • Deep reactive ion etching of in situ boron doped LPCVD Ge0

    In this article, the DRIE of in situ highly boron doped Ge 0.7Si 0.3 layers is described. A mixture of SF 6 and O 2 is chosen for its proven abilityto controlthe anisotropy,as observed in siliconetching [13]. The primary aim of this work is to achieve a vertical etch profile and a good selectivity, at least 50:1 towards SiO 2. We further stud-

    Get Price
  • Development Sf6 Alternative Gases in Switchgears - Switchgear

    Nov 23, 2019 · Sf6 gas is widely used in electric power transmission and distribution systems, as for example in gas insulated switchgear (GIS), circuit breakers (CB) and load break switches. It combines unique electrical insulation and arc interruption capability. However, it is also a very strong greenhouse gas with a global warming potential (GWP) of about 23500 over …

    Get Price
  • Journal of Physics: Conference Series OPEN ACCESS Related

    micromachining of silicon using an SF6/O2 inductively coupled plasma F Jiang, A Keating, M Martyniuk et al.-Low-pressure nonequilibrium plasma for a top-down nanoprocess Toshiaki Makabe and Takashi Yagisawa-Recent citations Electron collision cross sections of CHF 3 and electron transport in CHF 3 and CHF 3 Ar mixtures Satoru Kawaguchi et al-

    Get Price
  • The Stanford Nanofabrication Facility

    SF6, C4F8, O2, Ar 4 in (6”*) 1 Flexible (All Classes*) STS Si SF6, C4F8, O2 4 in 1 BackEnd MOS STS HRM Si SF6, C4F8, O2 4 in 1 BackEnd MOS Etcher Materials Etched Gases available Wafer Size Maximum Load Size Cleanliness Applied Materials 8100 SiO2, SiN, Si, PR O2, CHF3, SF6, Ar, NF3 4 in 24 BackEnd MOS Drytek 100

    Get Price
  • Xuezhi Ma - Postdoctoral Researcher - Texas AM University

    The surface roughness of the Ge after RIE can be sufficiently reduced by introducing SF6-O2 etching steps into the CF4-O2 etching process, while maintaining a relatively large ratio of vertical...

    Get Price
  • Balance Chemical Equation - Online Balancer

    For instance equation C6H5C2H5 + O2 = C6H5OH + CO2 + H2O will not be balanced, but PhC2H5 + O2 = PhOH + CO2 + H2O will; Compound states [like (s) (aq) or (g)] are not required. If you do not know what products are enter reagents only and click 'Balance'. In many cases a complete equation will be suggested.

    Get Price
  • The Southampton Nanofabrication Centre

    SF6/C4F8/Ar/O2 gases; Etch rates typically of 2um/min at 5um, 7um/min at 80um; 90+1°, 20nm rms sidewall roughness, Aspect ratio - PR30:1, SiO260:1; Reactive Ion Etching. The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source to chemically ion etch the material of the samples.

    Get Price
  • Used equipment parts | SemiStar

    Plasmatherm Versaline DSEIII ICP SF6, C4F8, O2, Ar Deep silicon etch, Deep Ge etch, SOI 100mm Advanced Vacuum 320 RIE CF4, CHF3, SF6, Ar,N2, CH3OH silicon, silicon based,dielectrics, magnetic materials up to 200mm

    Get Price
edge-iconMaybe You Will Be Interested
toTop
Click avatar to contact us
Chat Online